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| STGP10NB60SD N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESHTM IGBT General features Type STGP10NB60SD VCES 600V VCE(sat) (Max)@ 25C < 1.7V IC @100C 10A HIGH CURRENT CAPABILITY HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) TO-220 3 1 2 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency application (<1kHz). Internal schematic diagram Applications LIGHT DIMMER STATIC RELAYS MOTOR CONTROL Order codes Sales Type STGP10NB60SD Marking GP10NB60SD Package TO-220 Packaging TUBE November 2005 Rev 1 1/12 www.st.com 12 1 Electrical ratings STGP10NB60SD 1 Table 1. Electrical ratings Absolute maximum ratings Parameter Collector-Emitter Voltage (VGS = 0) Collector Current (continuous) at TC = 25C Collector Current (continuous) at TC = 100C Collector Current (pulsed) Gate-Emitter Voltage Total Dissipation at TC = 25C Storage Temperature - 65 to 150 Operating Junction Temperature C Value 600 20 10 80 20 31.5 Unit V A A W A W Symbol VCES IC Note 5 IC Note 5 ICM Note 1 VGE PTOT Tstg Tj Table 2. Rthj-case Rthj-amb Rthc-sink Thermal resistance Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal resistance Case-sink Typ 4.7 62.5 0.5 C/W C/W 2/12 STGP10NB60SD 2 Electrical characteristics 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 3. Symbol VBR(CES) VBR(CES) Static Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Gate Threshold Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Forward Transconductance Test Conditions IC= 250A, VGE= 0 IC= 1mA, VGE= 0 VGE= 15V, IC= 5A VGE= 15V, IC= 10A VGE=15V, IC= 10A, Tc= 125C VCE= VGE, IC= 250A VCE= Max Rating,TC= 25C VCE=Max Rating,TC= 125C VGE= 20V , VCE= 0 VCE = 25V, IC= 10A 5 2.5 Min. 600 20 1.15 1.35 1.25 Typ. Max. Unit V V V V V V A A nA S VCE(sat) 1.7 VGE(th) ICES 5 10 100 100 IGES gfs Table 4. Symbol C ies C oes Cres Qg Dynamic Parameter Test Conditions Min. Typ. 610 65 12 33 Max. Unit pF pF pF nC Input Capacitance VCE = 25V, f = 1MHz, V GE = 0 Output Capacitance Reverse Transfer Capacitance Total Gate Charge VCE = 400V, IC = 5A, VGE = 15V, (see Figure 17) Vclamp=480V, RG=1k Tj=125C 20 ICL Latching Current A 3/12 2 Electrical characteristics STGP10NB60SD Table 5. Symbol td(on) tr (di/dt)on tc tr(Voff) tf tc tr(Voff) tf Switching On/Off (inductive load) Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Cross-over Time Off Voltage Rise Time Current Fall Time Cross-over Time Off Voltage Rise Time Current Fall Time Test Conditions VCC = 480V, IC = 10A RG= 1k, VGE= 15V, Tj= 25C (see Figure 18) VCC = 480V, IC = 10A RG= 1k, VGE= 15V,Tj= 25C (see Figure 18) VCC = 480V, IC = 10A RG= 1k, VGE= 15V, Tj=125C (see Figure 18) Min. Typ. 0.7 0.46 8 2.2 1.2 1.2 3.8 1.2 1.9 Max. Unit ns ns A/s s s s s s s Table 6. Symbol Eon Note 3 Eoff Note 4 Ets Switching energy (inductive load) Parameter Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses Test Conditions VCC = 480V, IC = 10A RG= 1k, VGE= 15V, Tj= 25C (see Figure 18) Min. Typ. 0.6 5.0 5.6 Max. Unit mJ mJ mJ Table 7. Symbol IF IFM Vf trr Qrr Irrm Collector-emitter diode Parameter Forward Current Forward Current pulsed Forward On-Voltage If = 3.5A If = 3.5A, Tj = 125C 1.4 1.15 50 70 2.7 Test Conditions Min. Typ. Max. 7 56 1.9 Unit A A V V ns nC A If = 7A ,VR = 35V, Reverse Recovery Time Reverse Recovery Charge Tj =125C, di/dt = 100A/s Reverse Recovery Current (see Figure 19) (1)Pulse width limited by max. junction temperature (2) Pulsed: Pulse duration = 300 s, duty cycle 1.5% (3)Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) (4) Turn-off losses include also the tail of the collector current (5) Calculated according to the iterative formula: T -T JMAX C I ( T ) = ------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C CE SAT ( MAX ) C C 4/12 STGP10NB60SD 2 Electrical characteristics 2.1 Electrical characteristics (curves) Safe Operating Area Figure 2. Thermal Impedance Figure 1. Figure 3. Output Characteristics Figure 4. Transfer Characteristics Figure 5. Transconductance Figure 6. Collector-Emitter on Voltage vs Temperature 5/12 2 Electrical characteristics STGP10NB60SD Figure 8. Gate Threshold Voltage vs Temperature Figure 7. Collector-Emitter on Voltage vs Collector Current Figure 9. Capacitance Variations Figure 10. Gate Charge vs Gate-Emitter Voltage Figure 11. Switching Losses vs Gate Resistance Figure 12. Switching Losses vs Collector Current 6/12 STGP10NB60SD Figure 13. Switching Losses vs Temperature 2 Electrical characteristics Figure 14. Normalized Breakdown Voltage vs Temperature Figure 15. Emitter-Collector Diode Characteristics 7/12 3 Test Circuits STGP10NB60SD 3 Test Circuits Figure 17. Gate Charge Test Circuit Figure 16. Test Circuit for Inductive Load Switching Figure 18. Switching Waveform Figure 19. Diode Recovery Time Waveform 8/12 STGP10NB60SD 4 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 4 Package mechanical data STGP10NB60SD TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 10/12 STGP10NB60SD 5 Revision History 5 Revision History Date 18-Nov-2005 Revision 1 Initial release. Changes 11/12 5 Revision History STGP10NB60SD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 |
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